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Etron designing DRAMs for through silicon vias

Posted on June 3, 2012 by John in News

TAIPEI – Etron Technoogy Inc. has started work on buffered DRAM designs geared for 3-D ICs using through-hole vias. The company is also working on an upgrade of a low-cost gesture recognition module. Chip stacking technology has the potential to disrupt business models and traditional systems design, said Nicky Lu, the company’s founder and chief […]

3D, IC, memory, stack, TSV

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